Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
نویسندگان
چکیده
We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (% 8.5 meV) is comparable to the ensemble inhomogeneous broadening (% 12.4 meV). At low temperature (T £ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.
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